| Autor: |
Nestor D. Lopez, John Hoversten, Zoya Popovic, M. J. Poulton |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 IEEE MTT-S International Microwave Symposium Digest. |
| DOI: |
10.1109/mwsym.2008.4633104 |
| Popis: |
This paper presents a high-efficiency UHF power amplifier (PA) using a GaN HEMT on a SiC substrate transistor as the active device. The PA delivers 65W with 82% power added efficiency (PAE), and 45W with 84% PAE at 370MHz, with supply voltages of 35V and 28 V, respectively. Load pull techniques under Class-E conditions are used for device characterization and matching network design. The PA is implemented in a hybrid circuit with mixed lumped-element and transmission-line matching networks. A weighted Euclidean distance is defined to enable tradeoff studies between output power (P OUT ) and efficiency, in order to find the final optimal amplifier design. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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