Electrical and optical performance of midwave infrared InAsSb heterostructure detectors
| Autor: | Ł. Kubiszyn, Olga Markowska, A. Kębłowski, Krystian Michalczewski, Jaroslaw Rutkowski, Jozef Piotrowski, Emilia Gomółka, Piotr Martyniuk, Antoni Rogalski, Waldemar Gawron, Małgorzata Kopytko, Jarosław Jureńczyk |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Thermoelectric cooling business.industry General Engineering Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Gallium arsenide 010309 optics chemistry.chemical_compound Responsivity chemistry 0103 physical sciences Optoelectronics Mercury cadmium telluride Infrared detector Indium arsenide 0210 nano-technology business Dark current |
| Zdroj: | Optical Engineering. 57:1 |
| ISSN: | 0091-3286 |
| DOI: | 10.1117/1.oe.57.2.027107 |
| Popis: | We investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cutoff wavelengths near 5 μm at 230 K. The devices have been fabricated with different types of absorbing layers: nominally undoped absorber (with n-type conductivity), and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer type. Generally, the p-type absorber provides higher values of current responsivity than the n-type absorber, but at the same time also higher values of dark current. The device with the nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D * of nonimmersed devices vary from 2 × 109 to 5 × 109 cm Hz1/2 W ? 1 at 230 K, which is easily achievable with a two-stage thermoelectric cooler. Optical immersion increases the detectivity up to 5 × 1010 cm Hz1/2 W ? 1. |
| Databáze: | OpenAIRE |
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