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Thin-film transistors based on oxide and organic materials have recently attained much progress in flexible and low-cost electronic applications. The characteristic electronic properties of these materials make it a promising candidate as channel layer for the fabrication of high-performance devices. However, the p-type oxide and n-type organic TFTs are not stable because of their inherent electronic properties and the existence of a large amount of charge carrier traps. The device performance and stability of thin-film transistors are closely associated with charge transport mechanism of the active channel layer of the device. The emerging novel transistors based on amorphous oxide and organic semiconductor materials suffer from the high density of trap states inside the channel layer. The important device parameters, such as field-effect mobility and subthreshold swing depend on the charge carrier traps inside the materials. Hence, it is a scientific challenge for researchers to explore the microscopic origin of these traps. In this chapter, the density of localized states in the band gap of n-type materials such as zinc tin oxide (ZTO) and organic N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) channel layers is analysed through temperature-dependent transfer characteristics of respective thin-film transistors. |
