Autor: |
Kee Jeong Lee, Kyu Bum Choi, Sahn Nahm, Kyooho Jung, Jiwon Moon, Beom-Yong Kim, Tae Geun Seong, Kwon Hong, Beom Seok Lee, Sang Hyo Kweon |
Rok vydání: |
2014 |
Předmět: |
|
Zdroj: |
Current Applied Physics. 14:538-542 |
ISSN: |
1567-1739 |
Popis: |
Amorphous Pr 0.7 Ca 0.3 MnO 3 (APCMO) films were grown on a Pt/Ti/SiO 2 /Si (Pt–Si) substrate at temperatures below 500 °C and the Pt/APCMO/Pt–Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt–Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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