Inductively coupled plasma etching of graded-refractive-index layers of TiO2and SiO2using an ITO hard mask

Autor:	Gi Bum Kim, Cheolsoo Sone, E. Fred Schubert, Ahmed N. Noemaun, Frank W. Mont, Jaehee Cho
Rok vydání:	2011
Předmět:	Materials science business.industry Analytical chemistry Surfaces and Interfaces Dielectric Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Sputtering Sapphire Optoelectronics Dry etching Reactive-ion etching Inductively coupled plasma business Refractive index
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 29:051302
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.3620494
Popis:	Transparent dielectric layers with varying compositions of TiO2 and SiO2, and ITO are deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H2, CH4, and Cl2 chemical environments. The slope of the sidewall and the etch residue on the sidewall of the ITO hard mask are controlled by the flow rates of H2, CH4, and Cl2. ICP-RIE dry etch of TiO2 and SiO2 is investigated under fluorinated environments. Comparable etch rates of TiO2 and SiO2 (ratio ≈ 2:1) and high selectivity ≫ 1 over ITO are found. Graded-refractive-index (GRIN) layers, made up of multiple dielectric layers of TiO2 and SiO2, are patterned to form cylindrical pillars by ICP etching using the ITO hard mask. Fluorine containing residues are identified on the TiO2 and SiO2 surfaces. Various etch chemistries are investigated to obtain smooth, vertical, and residue-free sidewalls of the GRIN pillars.
Databáze:	OpenAIRE
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