Study of stress and infra-red absorption line of BN films containing various fractions of cubic phase
| Autor: | Gerard Nouet, V. Stambouli, Daniel Bouchier, S. Ilias |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Chemistry
Annealing (metallurgy) Mechanical Engineering Hydrostatic pressure Analytical chemistry Nucleation Infrared spectroscopy Mineralogy General Chemistry Spectral line Electronic Optical and Magnetic Materials Residual stress Materials Chemistry Electrical and Electronic Engineering Thin film Ion beam-assisted deposition |
| Zdroj: | Diamond and Related Materials. 9:1867-1875 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(00)00336-8 |
| Popis: | This paper focuses on the stress dependence of infrared absorption lines of BN films synthesized by ion beam assisted deposition (IBAD) and containing various fractions of cubic phase. The compressive stress ranges from −3 to –11 GPa and is found to be conditioned by the content in the c-BN phase. This stress results in a characteristic shift towards high wavenumbers of the IR TO c-BN peak. A frequency shift rate of 3.0±0.5 cm −1 /GPa was derived, very close to the one measured for bulk c-BN under hydrostatic pressure. The effect of post-deposition annealing was analyzed. We found the compressive stress to be slightly modified by a post-deposition annealing at 800°C. The resulting relaxation effect is found to be most effective in the c-BN part of mixed films, and in the h-BN one in c-BN rich films (>80% of cubic phase). From the latter observation, the stress level retained initially in the sp 2 -bonded fraction should reach −10 GPa. This stress level suggests a mechanism involving the rhombohedral form of BN as a precursory phase for c-BN nucleation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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