Enhancement-Mode In0.53Ga0.47As n-MOSFET with Self-aligned Gate-first Process and CVD HfAlO Gate Dielectric

Autor:	Goutam Kumar Dalapati, D. Z. Chi, H. J. Oh, S. J. Lee, G. Q. Lo, D. L. Kwong, J. Lin
Rok vydání:	2008
Předmět:	Materials science business.industry Gate dielectric MOSFET Mode (statistics) Process (computing) Optoelectronics Nanotechnology Self-aligned gate business
Zdroj:	Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2008.b-1-2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3493009ae527f3621c12c14c7411e973 https://doi.org/10.7567/ssdm.2008.b-1-2 Zobrazit plný text záznamu