GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing
| Autor: | Alain Bensoussan, M.G. Perichaud, R. Marec, L. Marchand, P. Calvel, J.-L. Muraro, G. Vignon, L. Portal, C. Barillot |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Chemistry
business.industry chemistry.chemical_element Biasing Test method High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) Xenon Electronic engineering Optoelectronics Irradiation Electrical and Electronic Engineering Safety Risk Reliability and Quality business Monolithic microwave integrated circuit Beam (structure) |
| Zdroj: | Microelectronics Reliability. 53:1466-1470 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2013.07.019 |
| Popis: | Two European GaAs power P-HEMT MMIC processes using representative test structures have been characterized in situ when irradiated by high energy heavy ion radiation beam (420 MeV Xenon source, LET = 46.6 MeV cm2/mg), and under various worst case bias including DC and high drive RF conditions applied. The test methodology conducted has been carefully defined in order to help to early discriminate failure mechanisms induced by biasing stresses from those possibly induced by heavy ion irradiation environment. It is demonstrated that the two P-HEMT processes tested under worst case application biasing conditions (both cumulated DC and RF) are immune to heavy ion radiation stress representative of harsh space environments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect