Autor: |
S. Radautsan, H. Riazi-Nejad, J.H. Schon, K. Kloc, E. Bucher, A. Nateprov |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings. |
DOI: |
10.1109/smicnd.1996.557451 |
Popis: |
The ZnO/CdS/CuGaSe/sub 2/ single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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