| Autor: |
L.A. Larson, L. Nguyen, L. Mantalas, W.H. Johnson, W.A. Keenan |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:166-172 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(91)96155-e |
| Popis: |
The uniformity of ion implantation across a chip is becoming more important as the density of devices on a chip increases and the matching tolerance of device parameters across a chip decreases and becomes more critical. In order to investigate ion-implant micro-uniformity, a special van der Pauw mask was designed with 400 structures per square centimeter. This mask has been used with a polysilicon-on-oxide test structure to investigate chip micro-uniformity. Both medium- and high-current implanters have been studied using this dense van der Pauw pattern. Contour maps, 3D maps and histograms are used to display the variation of dose across a chip area. Results are also presented for micro-nonuniformity patterns deliberately introduced on a wafer. Several optical techniques are also presented to map closely spaced stripes across the wafer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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