Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers

Autor:	Juan Jiménez, M. Bettiati, G. Hallais, M. Pommiès, F. Laruelle, E. V. K. Rao, Manuel Avella
Rok vydání:	2003
Předmět:	Chemistry business.industry Diffusion Alloy Analytical chemistry Cathodoluminescence engineering.material Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention law Impurity engineering Optoelectronics Charge carrier Luminescence business Quantum well
Zdroj:	physica status solidi (a). 195:159-164
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.200306297
Popis:	Low Temperature-Spectrally Resolved Cathodo-Luminescence (LT-SRCL) and Cathodo-Luminescence Imaging (CLI) have been used to study the effects of high temperature and high current density aging on 980 nm InGaAs/AlGaAs pump lasers. The aged lasers show a characteristic evolution of the luminescence band related to a thin (≅ 25 nm) InGaP etch-stop layer: a blue-shift of several meV is observed, together with a rather strong increase in the luminescence intensity. The blue-shift is related to an increase in the disorder of the InGaP alloy while the strong increase of the intensity may result from a different localization of the injected carriers due to a modification of the potential profile. A possible microscopic mechanism for the disordering of the InGaP layer is discussed, based on the migration of either p-type impurities (Zn, in this case) or excess group III interstitials.
Databáze:	OpenAIRE
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