Influence of Hf content on structure and electric properties of PHT thin films with self-buffered layer by PLD
| Autor: | Jun Zhu, Wenbo Luo, Junfeng Li, Zhipeng Wu |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance Ferroelectricity Titanate Surfaces Coatings and Films Pulsed laser deposition Ferromagnetism 0103 physical sciences Thin film 0210 nano-technology Polarization (electrochemistry) Instrumentation Layer (electronics) |
| Zdroj: | Vacuum. 134:69-72 |
| ISSN: | 0042-207X |
| Popis: | Three components of lead hafnate titanate (PbHf x Ti 1–x O 3 , PHT) thin films have been fabricated by pulsed laser deposition (PLD) on the Pt (111)/Ti/SiO 2 /Si (100) substrates. In order to reduce the mismatch between the thin films and substrates, low temperature self-buffered layer is adopted. The effects of Hf content on structure and electric properties of PHT thin films have been investigated. The PHT near the MPB (x = 0.48) shows the highest remnant polarization (2Pr = 93.23 μC/cm 2 ) and capacitance, even if its leakage current is a little worse than others. It should be noticed that the PHT ferroelectric films have a good performance after 2.15 × 10 10 fatigue reversals, which indicates that PHT films as a promising material can be applied in ferromagnetic random access memory (FRAM). |
| Databáze: | OpenAIRE |
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