Type-II band alignment of low-boron-content BGaN/GaN heterostructures
| Autor: | A. Kadys, Jūras Mickevičius, R. Tomašiūnas, O. Ligor, E. M. Pavelescu, Mindaugas Andrulevičius, Gintautas Tamulaitis |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Acoustics and Ultrasonics business.industry Band gap chemistry.chemical_element Heterojunction 02 engineering and technology Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Band offset Surfaces Coatings and Films Electronic Optical and Magnetic Materials X-ray photoelectron spectroscopy chemistry 0103 physical sciences Sapphire Optoelectronics 0210 nano-technology business Boron |
| Zdroj: | Journal of Physics D: Applied Physics. 52:325105 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/1361-6463/ab2337 |
| Popis: | The band offset parameters of low-boron-content BGaN/GaN heterojunctions have been studied using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) in BxGa1−xN epilayers (x ≤ 0.043) grown on GaN/sapphire and AlN/sapphire templates. A staggered-gap (type-II) band alignment has been identified at the BGaN/GaN heterojunction by XPS. A study of the red shift of deep-level-related yellow PL band and the band gap shrinkage of BGaN epilayers with increasing boron content confirmed the type-II band alignment and enabled us to estimate that the ratio of the conduction-to-valence band discontinuity is 57:43. It is also shown that the band gap bowing of the BGaN alloy system is accommodated in the conduction band. |
| Databáze: | OpenAIRE |
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