Low temperature N2-based passivation technique for porous silicon thin films

Autor:	Charles Musca, Timothy D. James, Adrian Keating, Giacinta Parish
Rok vydání:	2009
Předmět:	Materials science Passivation Silicon Anodizing Annealing (metallurgy) Dangling bond chemistry.chemical_element General Chemistry Condensed Matter Physics Porous silicon chemistry Materials Chemistry Thin film Composite material Buffered oxide etch
Zdroj:	Solid State Communications. 149:1322-1325
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2009.05.035
Popis:	A technique is presented for the passivation of porous silicon (PS) thin films via nitrogen based annealing at the lowest temperature ever reported. Annealing freshly anodized PS thin films at temperatures as low as 520 ∘C under N2 flow in a rapid thermal annealer produces films that show no change in refractive index when exposed to ambient conditions over 60 days. These films also exhibited chemical resistance by surviving a brief dip in both concentrated KOH and buffered HF. Unlike most other PS surface passivation methods, this technique causes negligible reduction in refractive index of the annealed PS thin films. Passivation only occurs when dangling bonds and mono-hydrides populate the PS surface, providing a path for thermal interactions with the N2 gas.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::34542b70f7b42da5234966011a3c3062 https://doi.org/10.1016/j.ssc.2009.05.035 Zobrazit plný text záznamu Full Text from ScienceDirect