The impact of molybdenum on silicon and silicon solar cell performance
| Autor: | J. R. Davis, Ajeet Rohatgi, H.C. Mollenkopf, R. H. Hopkins, R. B. Campbell |
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| Rok vydání: | 1980 |
| Předmět: |
Deep-level transient spectroscopy
Materials science Silicon business.industry chemistry.chemical_element Carrier lifetime Quantum dot solar cell Condensed Matter Physics Polymer solar cell Electronic Optical and Magnetic Materials law.invention Monocrystalline silicon chemistry Molybdenum law Solar cell Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 23:1185-1190 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(80)90032-5 |
| Popis: | Deep level transient spectroscopy coupled with dark and lighted I–V measurements were used to study the electrical properties of silicon crystals and solar cells purposely contaminated with controlled amounts of molybdenum. Mo severely degrades minority carrier lifetime, and hence solar cell performance, by inducing a recombination center at EV + 0.30 eV. Neither HCl nor POCl3 gettering at temperatures as high as 1100°C and times up to five hours mitigate the effects of Mo. Because the Mo segregation coefficient is small, 4.5 × 10−8, impurity contamination of silicon during crystal growth can be kept below the levels for which electrical properties are affected. |
| Databáze: | OpenAIRE |
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