Fabrication aspects of InP-CAIBE processing for photonic crystal devices

Autor:	S. Golka, Helmut Heidrich, H.J. Hensel, K. Janiak
Rok vydání:	2003
Předmět:	Fabrication Materials science Ion beam business.industry Band gap Physics::Optics chemistry.chemical_compound Resist chemistry Indium phosphide Optoelectronics Photonics business Quantum well Photonic crystal
Zdroj:	International Conference onIndium Phosphide and Related Materials, 2003..
DOI:	10.1109/iciprm.2003.1205315
Popis:	An improved Ar/Cl CAME process for the fabrication of InP-based Photonic Crystals (PhCs) is presented. Effects of temperature, ion beam, chlorine flow and other parameters are discussed. In particular feature size effects are investigated on a length scale of 200 to 400 nm required for the realization of infrared photonic band gaps. The potential of CAIBE for fabrication of deep and uniform hole patterns in InP is demonstrated. The good quality of the samples including multi quantum well InGaAsP/InP layers was demonstrated by performing transmission measurements by internal light source technique.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::344e203bcb9e2dbec8f7b7bbb5543ff4 https://doi.org/10.1109/iciprm.2003.1205315 Zobrazit plný text záznamu