High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Autor: Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldán, Gilson Wirth, Felix Palumbo, Mario Lanza
Rok vydání: 2023
Předmět:
Zdroj: Advanced Functional Materials. :2213816
ISSN: 1616-3028
1616-301X
Databáze: OpenAIRE