Electron-momentum spectroscopy of crystal silicon

Autor:	R. S. Matthews, Erich Weigold, I E McCarthy, Z. Fang, S. Utteridge, X. Guo, S. A. Canney, Maarten Vos
Rok vydání:	1998
Předmět:	Diffraction Reflection high-energy electron diffraction Materials science Electron diffraction Gas electron diffraction Energy-dispersive X-ray spectroscopy Atomic physics Valence electron Electron spectroscopy Electron backscatter diffraction
Zdroj:	Physical Review B. 57:12882-12889
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.57.12882
Popis:	Electron-momentum spectroscopy based on the $(e,2e)$ reaction has been used to observe the energy-momentum density of valence electrons in the [110] direction for an ultrathin, free-standing film of crystalline silicon. An asymmetric scattering geometry is used in which the incident, scattered and ejected electron energies are 20.8, 19.6, and 1.2 keV, respectively. The measurement is complicated by the possibility of diffraction of the free electrons. The theory of the reaction including diffraction is summarized and applied to experiments with different target orientations. The orientation is determined from an independent electron diffraction experiment. Very good agreement between theory and experiment is observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::343918a98e041160b23dad852a284fe0 https://doi.org/10.1103/physrevb.57.12882 Zobrazit plný text záznamu