Deep‐Level Dominated Electrical Characteristics of Au Contacts on β ‐ SiC
Autor: | Robert F. Davis, J. W. Bumgarner, L. G. Matus, J. B. Petit, H. S. Kong, K. Das |
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Rok vydání: | 1990 |
Předmět: |
Materials science
Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Condensed Matter Physics Epitaxy Thermal conduction Crystallographic defect Space charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound stomatognathic system chemistry Beta (plasma physics) Materials Chemistry Electrochemistry Silicon carbide Optoelectronics business Diode |
Zdroj: | Journal of The Electrochemical Society. 137:1598-1603 |
ISSN: | 1945-7111 0013-4651 |
DOI: | 10.1149/1.2086735 |
Popis: | Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries. |
Databáze: | OpenAIRE |
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