Infrared luminescence from silicon nanostructures heavily doped with boron
| Autor: | N. T. Bagraev, L. E. Klyachkin, R. V. Kuzmin, A. M. Malyarenko, V. A. Mashkov |
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| Rok vydání: | 2012 |
| Předmět: |
Physics
Silicon business.industry Exciton Doping chemistry.chemical_element Electroluminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Dipole chemistry Optoelectronics Boron business Circular polarization Quantum well |
| Zdroj: | Semiconductors. 46:275-288 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782612030049 |
| Popis: | The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW {\delta}-barriers interface. |
| Databáze: | OpenAIRE |
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