Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics

Autor:	Noguchi Shigeru, Sano Keiichi, Shoichi Nakano, Hiroshi Iwata, Ishida Satoshi, Masato Osumi, Yukinori Kuwano, Tomoyuki Nohda, Takashi Kuwahara, Seiichi Kiyama, Hiroyuki Kuriyama, Shinya Tsuda
Rok vydání:	1992
Předmět:	Materials science business.industry General Engineering General Physics and Astronomy Field effect Substrate (electronics) Laser law.invention law Thin-film transistor Optoelectronics Microelectronics Irradiation business Excimer laser annealing
Zdroj:	Japanese Journal of Applied Physics. 31:4550
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.31.4550
Popis:	Film uniformity is the main problem when applying laser-recrystallised poly-Si films to thin film transistors (TFTs) in giant micro electronics. However, this has been dramatically improved by a new excimer laser annealing method in which the solidification process of molten Si is controlled by low-temperature (≦400°C) substrate heating during excimer laser annealing. Poly-Si TFT fabricated around the laser irradiation overlap region exhibited a high field effect mobility uniformity of within ±8%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::341324270bedd379b957dc8d7256a3d0 https://doi.org/10.1143/jjap.31.4550 Zobrazit plný text záznamu