VOC Over 1.4 V for Amorphous Tin-Oxide-Based Dopant-Free CsPbI2Br Perovskite Solar Cells
| Autor: | Izuru Takei, Yoshitaka Sanehira, Shuzi Hayase, Muhammad Akmal Kamarudin, Zhanglin Guo, Tsutomu Miyasaka, Ayumi Ishii, Gyu Min Kim, Youhei Numata, Ajay Kumar Jena |
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| Rok vydání: | 2020 |
| Předmět: |
Tandem
Dopant business.industry Chemistry General Chemistry 010402 general chemistry Tin oxide 01 natural sciences Biochemistry Catalysis 0104 chemical sciences Amorphous solid Colloid and Surface Chemistry State density Optoelectronics business Conduction band Layer (electronics) Perovskite (structure) |
| Zdroj: | Journal of the American Chemical Society. |
| ISSN: | 1520-5126 0002-7863 |
| DOI: | 10.1021/jacs.0c02227 |
| Popis: | CsPbI2Br perovskite solar cells have attracted much attention because of the rapid development in their efficiency and their great potential as a top cell of tandem solar cells. However, the VOC outputs observed so far in most cases are far from that desired for a top cell. Up to now, with various kinds of treatments, the reported champion VOC is only 1.32 V, with a VOC deficit of 0.60 V. In this work, we found that aging of the SnCl2 precursor solution for the electron-transporting layer can promote the VOC of CsPbI2Br solar cells by employing a dopant-free-polymer hole transport material (HTM) over 1.40 V and efficiency over 15.5% with high reproducibility. With the champion VOC of 1.43 V, the VOC deficit was reduced to |
| Databáze: | OpenAIRE |
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