Study of Short-Range Motion of Atomic Hydrogen in Amorphous Silicon by Neutron Reflectometry

Autor:	H. Jia, W. D. Dozier, Ruth Shinar, K. W. Herwig, Joseph Shinar
Rok vydání:	1992
Předmět:	Amorphous silicon Materials science Silicon Hydrogen Scattering Annealing (metallurgy) Neutron diffraction chemistry.chemical_element Molecular physics chemistry.chemical_compound Crystallography chemistry Neutron reflectometry Thin film
Zdroj:	MRS Proceedings. 258
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-258-401
Popis:	Preliminary results of neutron reflectometry (NR) measurements on if sputter-deposited a-Si:H/a-Si:D bilayers indicate that this technique may be used to monitor H and D motions over distances of ≈ 10 to 200 Å with a nominal resolution of 5 – 10 Å. In studying rf sputter-deposited thin films containing a high density of microvoids annealed at 270 C, we found that the hydrogen diffused a distance of only ≈ 100 Å. Further annealing at 270 and 280 C produced no additional motion. This result is consistent with a model of this system in which the hydrogen is trapped in microvoids after moving a relatively short distance.
Databáze:	OpenAIRE
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