Comparison of Ar‐, O‐, and Cl‐ion implant‐damage gettering of gold from silicon using metal oxide silicon techniques

Autor:	A. G. Nassibian, B. Golja
Rok vydání:	1982
Předmět:	Argon Materials science Silicon business.industry Annealing (metallurgy) Metallurgy General Physics and Astronomy chemistry.chemical_element Oxygen Ion Ion implantation chemistry Getter Optoelectronics Wafer business
Zdroj:	Journal of Applied Physics. 53:6168-6173
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.331528
Popis:	Ar‐, O‐, and Cl‐ion implant‐damage gettering of gold from silicon has been examined using metal oxide silicon (MOS) techniques. Silicon wafers were intentionally contaminated with gold and then the ion implantations were performed on the back surface of the wafer and the damaged layer subsequently annealed at 1050° for 60 min. All dosages were 1016 atoms/cm2. Comparison of generation lifetime and interface trap density between the variously implanted wafers and the gold‐diffused wafer demonstrated the improvement achieved with implant‐damage gettering. The relative order of merit for the ions was found to be Ar≳O≳Cl.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33fe8a7c9e5e8671eccdc95be0e65943 https://doi.org/10.1063/1.331528 Zobrazit plný text záznamu