Diffusion of chromium into epitaxial gallium arsenide
| Autor: | E. P. Drugova, M. D. Vilisova, I. V. Ponomarev, V. A. Chubirko |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Arrhenius equation
Materials science Analytical chemistry chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Chromium symbols.namesake chemistry symbols Effective diffusion coefficient Solubility |
| Zdroj: | Semiconductors. 42:238-241 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378260802022x |
| Popis: | Diffusion of Cr into epitaxial GaAs in an open system in the temperature range of 750–850°C was studied. Temperature dependences of the diffusion coefficient and solubility of Cr in GaAs were determined. Temperature dependences of the diffusion coefficient and solubility of Cr are described by the Arrhenius equation with the parameters D0 = 1.9 × 109 cm2/s and E = 4.1 ± 0.2 eV for the diffusion coefficient and N0 = 2.3 × 1024 cm−3 and E0 = 1.9 ± 0.4 eV for solubility. The effect of protective SiO2 filmon the Cr diffusion coefficient and morphology of the GaAs surface after diffusion was studied. |
| Databáze: | OpenAIRE |
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