Development of a spatially controllable chemical vapor deposition reactor with combinatorial processing capabilities

Autor:	Raymond A. Adomaitis, Gary W. Rubloff, Jae-ouk Choo, Laurent Henn-Lecordier, Yuhong Cai
Rok vydání:	2005
Předmět:	Materials science business.industry Nanotechnology Chemical vapor deposition Combustion chemical vapor deposition Atomic layer deposition Carbon film Plasma-enhanced chemical vapor deposition Deposition (phase transition) Wafer Thin film Process engineering business Instrumentation
Zdroj:	Review of Scientific Instruments. 76:062217
ISSN:	1089-7623 0034-6748
Popis:	Most conventional chemical vapor deposition (CVD) systems do not have the spatial actuation and sensing capabilities necessary to control deposition uniformity or to intentionally induce nonuniform deposition patterns for single-wafer combinatorial CVD experiments. In an effort to address these limitations, a novel CVD reactor system has been developed that can explicitly control the spatial profile of gas-phase chemical composition across the wafer surface. This paper discusses the construction of a prototype reactor system featuring a three-zone, segmented showerhead design. Experiments are performed to assess the ability of this reactor system to deposit tungsten films by the hydrogen reduction process; segment-to-segment process recipes are controlled to deposit spatially nonuniform W films. The capabilities of this reactor system for materials discovery research are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33f945a30af0b17d587bb66254cd379e https://doi.org/10.1063/1.1906183 Zobrazit plný text záznamu