| Autor: |
P. J. Willadsen, David F. Brown, Ivan Milosavljevic, A. Kurdoghlian, Paul Hashimoto, Miroslav Micovic, Robert Grabar, Adam J. Williams, Keisuke Shinohara, Shawn D. Burnham, C. Butler |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2011.6131584 |
| Popis: |
We report our second-generation mm-wave GaN double-heterostructure FET (DHFET) device technology which uses MBE regrowth of n+ ohmic regions to reduce parasitic resistance, and an improved T-gate process which demonstrated reduced current-collapse. These devices were utilized in a MMIC with a 600 µm wide output stage which achieved 1024 mW of output power (1.7 W/mm) and PAE of 19.1% at 95 GHz at a bias of 14V. This combination of power and PAE represents a substantial improvement over competing technologies, such as InP HEMTs, as well as our own previous reports of GaN MMIC amplifiers in this frequency range. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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