Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development
| Autor: | Kazuhito Yasuda, Madan Niraula, Y. Agata, Ryo Torii, R. Tamura, Y. Higashira |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics::Instrumentation and Detectors business.industry Detector 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science 0103 physical sciences Materials Chemistry Optoelectronics Wafer Metalorganic vapour phase epitaxy Electrical and Electronic Engineering 0210 nano-technology business Single crystal Dark current |
| Zdroj: | Journal of Electronic Materials. 48:7680-7685 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07601-z |
| Popis: | Metalorganic vapor phase epitaxy of uniform and thick single crystal CdTe on (211) Si substrates has been studied for x-ray imaging detector development. Periodic growth interruptions are introduced during thick CdTe layer growth in order to improve crystal quality. Thick single crystal CdTe layers with uniform material properties were obtained. When compared to continuously grown crystals, these growth interrupted crystals exhibited better uniformity in thickness and x-ray rocking curve values throughout the wafer. We further developed a (20 × 20) pixels x-ray imaging array using these crystals. The detector showed a low dark current per pixel, and the value was uniform among the pixels which are required criteria to improve the uniformity of detector response. These results demonstrate single crystals CdTe obtained in this study are suitable for x-ray imaging detector development. |
| Databáze: | OpenAIRE |
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