| Autor: |
Shea-Jue Wang, Yan-Ting Chen, Mu-Chun Wang, Heng-Sheng Huang, Shuang-Yuan Chen, Ko-Chin Hsu |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 7th International Symposium on Next Generation Electronics (ISNE). |
| DOI: |
10.1109/isne.2018.8394643 |
| Popis: |
The off-state current of MOSFETs under 28nm-node or beyond seems more important than before to keep the long-time operation for mobile electronic products. In this study, we focus on two parts to expose the off-state current behaviors for 28nm nMOSFETs: the drain current under the negative gate bias and the leakage mechanisms of whole devices in off-state, coming from DIBL, GIDL and punch-through effects. Rating the contribution of these three factors and in different channel lengths, DPN nitrogen concentrations and annealing temperatures is chiefly focused |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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