Channel Strain Characterization in Semiconductor Device by Techniques Based on Transmission Electron Microscope

Autor:	Yun-Yu Wang, Jeffrey B. Johnson, Anthony G. Domenicucci, Dureseti Chidambarrao, Jinghong Li
Rok vydání:	2011
Předmět:	Conventional transmission electron microscope Diffraction Materials science Electron diffraction Electron tomography business.industry Transmission electron microscopy Scanning transmission electron microscopy Energy filtered transmission electron microscopy Optoelectronics business PMOS logic
Zdroj:	MRS Proceedings. 1349
ISSN:	1946-4274 0272-9172
DOI:	10.1557/opl.2011.1403
Popis:	Three techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffraction (CBED), nano beam diffraction (NBD) and dark-filed holography (DFH). Consistent channel strain measurements from the three techniques on the same TEM sample (eSiGe PMOS with 17%Ge) were obtained. Reliable strain/stress measurement results in the channel area have been achieved with very good agreement with computer-aided design (TCAD) calculations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33c2e8d61ba4a58b41cf8fe7fd0cee51 https://doi.org/10.1557/opl.2011.1403 Zobrazit plný text záznamu Full text from SpringerLink