Photoluminescence studies of the interface of CdS/CdTe heterojunctions

Autor:	Chris Ferekides, Petru Gaşin, Iuliana Caraman, H. Zhao, Don L. Morel, Sergiu Vatavu
Rok vydání:	2009
Předmět:	Interface layer Photoluminescence Chemistry Impurity business.industry Pl spectra Optoelectronics Heterojunction Atmospheric temperature range Condensed Matter Physics business Layer (electronics) Cadmium telluride photovoltaics
Zdroj:	physica status solidi c. 6:1299-1302
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200881208
Popis:	The photoluminescence analysis of CdS/CdTe interface layer of CdS/CdTe heterojunction has been carried out in the 15-100 K temperature range. An attempt to correlate observed PL features with the CdSx Te1–x layer presence at the interface of the heterojunctions was made. It is assumed the 1.525 eV band has an excitonic origin and 1.37X PL band is a characteristic impurity band due to CdSTe layer. Comparative plots showing SnO2/CdTe PL spectra are given as well. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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