| Autor: |
Biswajit Baral, Sarosij Adak, Sudhansu Mohan Biswal, Dhananjaya Tripathy, Debasish Navak, Sanjit Kumar Swain, Umakanta Nanda, Asmit Amlan Sahoo, Satish Kumar Das |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Devices for Integrated Circuit (DevIC). |
| Popis: |
This paper presents the performance of non-uniformed doped double gate (DG) MOSFET with different spacer variations with an aim to analysis the effects of short channel and various performance metrics. In this work we have taken silicon as the channel material with non-uniform doping for studying the analog and RF performances. Spacer's materials having different permittivities were used to understand their effect on the device performance. Based on the simulations, we can conclude that analog and Radio Frequency performance of the device shows an significant improvement with addition of spacer layer. We have used computer aided design (TCAD) simulations by SILVACO International. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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