High-power digital controlled artificial dielectric GaN reconfigurable transmission lines for digitally assisted RFICs

Autor:	Tim LaRocca, Monte Watanabe
Rok vydání:	2011
Předmět:	Permittivity Materials science business.industry Electrical engineering Gallium nitride Dielectric High-electron-mobility transistor law.invention Capacitor chemistry.chemical_compound Electric power transmission chemistry Transmission line law Digital control business
Zdroj:	2011 IEEE Radio Frequency Integrated Circuits Symposium.
DOI:	10.1109/rfic.2011.5940625
Popis:	The first known GaN implementation of high-power digital controlled artificial dielectric (DiCAD) reconfigurable transmission lines is presented. DiCAD was formed by integrating GaN HEMT switches and metal-insulator-metal capacitors (MIMCAPs) into coplanar strip transmission lines. Standard GaN HEMT processing techniques were used, making DiCAD easily compatible with future circuit designs. The DiCAD transmission line's effective dielectric constant exhibits linear digital control from 15 to 32 with 3-bit resolution up to 50GHz. P 1dB is measured to be greater than 27dBm and OIP 3 is calculated to be greater than 48dBm for all states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33b472039e5bdf7350802cece9a93c1c https://doi.org/10.1109/rfic.2011.5940625 Zobrazit plný text záznamu