Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for Power Elec-tronics Technology. Review
| Autor: | V.V. Luchinin, A.V. Afanasev, S.A. Reshanov, V.A. Ilyin, Ascatron Ab, Kista – Stockholm, Sweden |
|---|---|
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Proceedings of Universities. ELECTRONICS. 25:483-396 |
| ISSN: | 2587-9960 1561-5405 |
| Popis: | Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of ETU «LETI» in the synthesis of monocrystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology was carried out. It has been shown that modern CVD reactors allow to implement the growth processes of SiC epitaxial structures of high quality with the following parameters: substrates diameter up to 200 mm; thicknesses of epitaxial layers from 0.1 to 250 μm; layers of n - and p -types conductivity with ranges of doping levels 10-10 cm and 10-10 cm, respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a specific type of reactor. It requires a detailed consideration of the technological factors presented in this paper, which at the end determine the achievable parameters of SiC-epitaxial products |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|