Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications

Autor: C. Ngo, K. Litvin, S.E. Rosenbaum, Umesh K. Mishra, M.A. Melendes, M. Lui, L.D. Nguyen, Lawrence E. Larson, C.S. Chou, M. Thompson
Rok vydání: 1991
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.44490
Popis: We have developed and fabricated a variety of single-stage coplanar waveguide MMIC amplifiers based on our InP-based AlInAs/GaInAs HEMT device technology. The measured f(t) of 0.15-micron devices was 120 GHz and fmax was 200 GHz. The dc transconductance was greater than 720 mS/mm. The 12-GHz single-stage MMIC amplifier had a noise figure of 1.3 dB with an associated gain of 16.0 dB. A 35 GHz single-stage amplifier had a measured gain of 10.9 dB and a measured input return loss of -14.4 dB. A 60 GHz single-stage amplifier had a measured gain of 8.4 dB and a measured input return loss of -18.4 dB.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze: OpenAIRE