Morphology of GaSb-based island films

Autor:	O. I. Rabinovich, A. R. Kushkhov, D. S. Gaev
Rok vydání:	2011
Předmět:	Inorganic Chemistry Crystallography Morphology (linguistics) Materials science Chemical engineering Atomic force microscopy General Chemical Engineering Materials Chemistry Metals and Alloys Evaporation Evaporation temperature Fractal dimension
Zdroj:	Inorganic Materials. 48:10-15
ISSN:	1608-3172 0020-1685
Popis:	GaSb nanoisland films have been grown via incongruent evaporation of Ga1 − xSbx films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to depend on the evaporation temperature. The fractal dimension of the surface of the grown structures has been evaluated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3384942afb7f0d7a55bceb79dcd7db20 https://doi.org/10.1134/s0020168512010098 Zobrazit plný text záznamu Full text from SpringerLink