Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications
| Autor: | Santosh Menon, B. Greenwood, Jifa Hao, Filip Kudrna, M. Thomason, Ladislav Seliga, Aakash Arora, Roman Malousek, Matej Blaho, B. Williams, Ihsiu Ho, Radim Spetik, Shuji Fujiwara |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Trench mosfet Thermal runaway business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Inductive load 01 natural sciences 0103 physical sciences Limit (music) 0202 electrical engineering electronic engineering information engineering business Low voltage |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd46842.2020.9170095 |
| Popis: | the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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