Photopumped room‐temperature continuous operation of native‐oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well‐heterostructure lasers

Autor:	T. A. Richard, K. C. Hsieh, A. R. Sugg, E. I. Chen, Nick Holonyak
Rok vydání:	1993
Předmět:	Materials science Continuous operation business.industry Oxide General Physics and Astronomy Heterojunction Laser Waveguide (optics) law.invention Semiconductor laser theory Optical pumping chemistry.chemical_compound chemistry law Optoelectronics business Quantum well
Zdroj:	Journal of Applied Physics. 74:797-801
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354868
Popis:	Data are presented on the 300 K (and 77 K) continuous photopumped laser operation of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructures (QWHs) that have been oxidized (H2O vapor+N2, 425 °C) selectively along the high‐band‐gap heterolayers located on either side of a GaAs waveguide (WG) region with an InxGa1−xAs QW in its center. Transmission electron microscope images show that the oxide‐embedded GaAs‐InxGa1−xAs WG+QW active region remains unoxidized and thus is sandwiched between electrically insulating AlyGa1−yAs native oxide layers. The thresholds for photopumped 300 K continuous laser operation of the as‐grown and oxide‐embedded QWHs are approximately equal after differences in the Ar+‐laser photopumping efficiencies are considered.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3380985d7831d87dd51cf34805691cbd https://doi.org/10.1063/1.354868 Zobrazit plný text záznamu