Selective anisotropic etching of GaN over AlGaN for very thin films
| Autor: | Isaac Khalaf, Adam J. Williams, Miroslav Micovic, Joel C. Wong, David F. Brown, Andrea Corrion |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry chemistry.chemical_element Gallium nitride 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry Etching (microfabrication) 0103 physical sciences Surface roughness Optoelectronics Thin film Reactive-ion etching Inductively coupled plasma 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:030603 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5012530 |
| Popis: | Selective etching of gallium nitride (GaN) over aluminum gallium nitride (AlxGa1-xN) with inductively coupled plasma and reactive ion etching (RIE) was examined using only chlorine and oxygen gasses. Etch selectivity was heavily influenced by the amount of oxygen present during etching and was slightly influenced by RIE power. Surface roughness was also influenced heavily by the oxygen flow and RIE power which is important for local and across-wafer uniformity. Etch rates were intentionally minimized for use for highly controlled etching of very thin GaN and Al0.25Ga0.75N epitaxial layers. Maximum tested etch rates for GaN and Al0.25Ga0.75N were 200 and 15 A/min, respectively, and maximum selectivity between GaN and Al0.25Ga0.75N achieved was at least 68.5 to 1. Above a certain oxygen flow, the etch rate of both GaN and Al0.25Ga0.75N drop so drastically that it was impractical to obtain the etch rate and selectivity in a timely manner. Optimum selectivity was obtained with a low oxygen flow to inhibit Al0... |
| Databáze: | OpenAIRE |
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