Boron contamination and precipitation during the growth of InP

Autor:	R. L. Henry, J. D. Oberstar, E.M. Swiggard, Peter Williams, Judith E. Baker, B. G. Streetman
Rok vydání:	1981
Předmět:	Photoluminescence Materials science Precipitation (chemistry) Inorganic chemistry Oxide chemistry.chemical_element Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound chemistry Boron nitride Materials Chemistry Pyrolytic carbon Crystallite Boron Single crystal
Zdroj:	Journal of Crystal Growth. 54:443-448
ISSN:	0022-0248
DOI:	10.1016/0022-0248(81)90497-8
Popis:	We have examined polycrystalline and single crystal, liquid encapsulated Czochralski (LEC) grown InP for evidence of boron contamination using secondary-ion mass spectrometry (SIMS) and photoluminescence. Precipitates of boron or a boron compound have been found in InP grown by the LEC method with boric oxide (B 2 O 3 ) encapsulation and pyrolytic boron nitride (pBN) crucibles. The density of precipatates appears to increase towards the last-to-freeze end of the boules. Neither B 2 O 3 or pBN appears to be solely responsible for the observed phenomenon. At present, the source of boron contamination most consistent with our observations is the result of interaction between B 2 O 3 and pBN. A diffusion coefficient of D (750°C) -14 cm 2 s -1 for boron in InP has been determined in this work.
Databáze:	OpenAIRE
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