Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs

Autor:	Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
Rok vydání:	2021
Zdroj:	2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
DOI:	10.1109/imfedk53601.2021.9637625
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3378e9ae22664d34ec48e8e835e60d37 https://doi.org/10.1109/imfedk53601.2021.9637625 Zobrazit plný text záznamu