Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

Autor:	I. T. Serenkov, Elena I. Shek, M.I. Makovijchuk, E.O. Parshin, V. I. Sakharov, Nikolai A. Sobolev, K.F. Shtel'makh, Yu. A. Kudryavtsev, Yu. A. Nikolaev, R.N. Kyutt, A. M. Emel’yanov
Rok vydání:	1997
Předmět:	Erbium Photoluminescence Materials science chemistry Silicon Annealing (metallurgy) business.industry Optoelectronics chemistry.chemical_element General Materials Science Condensed Matter Physics business Atomic and Molecular Physics and Optics
Zdroj:	Solid State Phenomena. :257-262
ISSN:	1662-9779
DOI:	10.4028/www.scientific.net/ssp.57-58.257
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33781bddd61e37ab761803c44a8f65da https://doi.org/10.4028/www.scientific.net/ssp.57-58.257 Zobrazit plný text záznamu