New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride

Autor:	David C. Boyd, Kwok-Lun Ho, Jen-Wei Hwang, Richard T. Haasch, Klavs F. Jensen, Wayne L. Gladfelter, John F. Evans
Rok vydání:	1988
Předmět:	Materials science chemistry Hybrid physical-chemical vapor deposition Aluminium Inorganic chemistry chemistry.chemical_element Deposition (phase transition) Chemical vapor deposition Nitride Atmospheric temperature range Thin film Combustion chemical vapor deposition
Zdroj:	MRS Proceedings. 131
ISSN:	1946-4274 0272-9172
Popis:	Organometallic aluminum azides have been found to be effective precursors for the low temperature chemical vapor deposition of thin films of aluminum nitride. Quantitative analysis of the gas phase products of the reaction are used to develop an understanding of the reaction. Rate studies of the deposition were performed in the temperature range from 400 to 800°C. Below 525°C, an activation barrier of 26.4 kcal/mol was found, while above 525°C, a value of 5.23 kcal/mol was obtained. The effects of the presence of N-C bonds and the type of Al-N interaction within the precursor are evaluated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::33601d98aca28cbc41f104ac71e082b0 https://doi.org/10.1557/proc-131-447 Zobrazit plný text záznamu Full text from SpringerLink