Analytical study of drain current and transconductance for a new cylindrical gate MOSFET structure
| Autor: | A. Bouziane, Abdellah Aouaj, Hind Jaafar, Benjamin Iniguez |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Computer simulation business.industry Transconductance Semiconductor device modeling Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Science::Other Threshold voltage Computer Science::Hardware Architecture Logic gate MOSFET Optoelectronics Condensed Matter::Strongly Correlated Electrons Poisson's equation business Metal gate |
| Zdroj: | 2018 4th International Conference on Optimization and Applications (ICOA). |
| DOI: | 10.1109/icoa.2018.8370495 |
| Popis: | In this paper, we present a comparison study on the performance of cylindrical gate (CG) MOSFET with graded channel doping (GC), dual metal gate (DMG) and dual oxide thickness (DOT). We develop compact model of short channel characteristics like drain current density, transconductance and drain conductance for this new structure (GC-DMG-DOT) SG MOSFET by solving 2D Poisson equation. The results are compared with the DMG MOSFET and DMG-DOT MOSFET devices. The model results are validated by numerical simulation results obtained by commercially simulator TCAD ATLAS. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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