Investigation of Damage Mechanisms in PMMA during ToF-SIMS Depth Profiling with 5 and 8 keV SF5+ Primary Ions

Autor:	Christine M. Mahoney, James G. Kushmerick, Kristen L. Steffens
Rok vydání:	2010
Předmět:	Materials science Ion beam Polyatomic ion Analytical chemistry Ion source Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry General Energy X-ray photoelectron spectroscopy Sputtering Molecular film Physical and Theoretical Chemistry Thin film
Zdroj:	The Journal of Physical Chemistry C. 114:14510-14519
ISSN:	1932-7455 1932-7447
DOI:	10.1021/jp103938y
Popis:	Cluster secondary ion mass spectrometry (cluster SIMS) has been proven to be a useful technique for the surface and in-depth characterization of molecular films. In this study, an SF5+ polyatomic primary ion source is utilized for depth profiling in poly(methyl methacrylate) (PMMA) bulk and thin films (200 nm). The effects of SF5+ ion beam energy are discussed in detail. Both 5 and 8 keV ion beam energies are utilized for depth profiling experiments, where the chemistry of sputtering is investigated using surface analytical tools such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) in conjunction with SIMS. Thin film depth profiles acquired with 5 keV SF5+ display evidence of significant damage accumulation at the interface in the form of a highly cross-linked polymer gel. There is very little evidence of similar damage accumulation at the interface for the corresponding 8 keV SF5+depth profile. AFM and XPS analysis of the sputtered crater bottoms also indicates that very diffe...
Databáze:	OpenAIRE
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