Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications

Autor:	E. Kaltalioglu, W. Taylor, Oscar D. Restrepo, Jeyaraj Antony Johnson, Mohamed A. Rabie, P. Paliwoda, Fernando Guarin, B. Min, E.C. Silva, K. Barnett, M. Boenke
Rok vydání:	2020
Předmět:	010302 applied physics Materials science business.industry Amplifier Silicon on insulator 01 natural sciences Electromigration Characterization (materials science) Stack (abstract data type) 0103 physical sciences Thermal Optoelectronics Thermal simulation business 5G
Zdroj:	IRPS
DOI:	10.1109/irps45951.2020.9129287
Popis:	This paper presents a systematic methodology by thermal characterization and simulation of a 3-FET stacked K/Ka-band class-AB power amplifier built on GLOBALFOUNDRIES 45nm SOI process. A detailed temperature profile is obtained in the FEOL and BEOL stacks by first using special gate Kelvin measurement structures and novel Kelvin metal sensor stack at several Mx layers (M 1 -M 5 ), which calibrate models to then be applied in a thermal simulation of the PA itself.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3338096f6d555786615559d802f465ea https://doi.org/10.1109/irps45951.2020.9129287 Zobrazit plný text záznamu