Zn-doping in OMVPE Grown lnP:Zn/lnGaAs/lnPp-i-n double heterojunctlons with lnGaAs:Zn contacting layers
| Autor: | S. R. Sloan, M. J. Ludowise, J. E. Turner, F. G. Kellert |
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| Rok vydání: | 1992 |
| Předmět: |
Chemistry
Inorganic chemistry Doping Analytical chemistry chemistry.chemical_element Crystal growth Heterojunction Zinc Condensed Matter Physics Epitaxy Acceptor Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Materials Chemistry Electrical and Electronic Engineering Thin film |
| Zdroj: | Journal of Electronic Materials. 21:983-987 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02684207 |
| Popis: | We report on the control of zinc in organometallic vapor phase epitaxial (OMVPE) grown InP:Zn/InGaAs/InPp- i- n double heterojunctions with InGaAs:Zn contacting layers. As a function of diethylzinc (DEZn) flow, we measure net acceptor concentrations for the InP:Zn p-layer in the range 2 × 1017≤N a−N d≤ 9 × 1017 cm−3. A 435°C post-growth anneal for 300 sec increases the net acceptor concentrations by a factor of 3.6 − to 6 × 1017≤N a−N d≤ 3 × 1018 cm−3. When the annealed value ofN a − Ndin the InP:Zn layer is 6 × 1017 cm−3 , secondary ion mass spectrometry (SIMS) measurements show abrupt Zn-doping transitions at the heterojunction interfaces. In contrast, when the annealed value ofN a − Ndin the InP:Zn layer is near the saturation value of 3 × 1018 cm−3, SIMS measurements show significant movement of Zn into the nominally undoped InGaAs instrinsic layer. Increasedp-i-n diode capacitance is associated with the Zn movement. |
| Databáze: | OpenAIRE |
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