High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications

Autor:	Youngmin Kim, Hongjong Park, Iljin Lee, Joonhoi Hur, Sangmin Yoo
Rok vydání:	2022
Zdroj:	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
DOI:	10.1109/vlsitechnologyandcir46769.2022.9830256
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3325ad473b84c7769ec84cfb09088276 https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830256 Zobrazit plný text záznamu