| Autor: |
E.P. Drugova, V. A. Chubirko, D.Y. Mokeev, L.P. Porokhovnichenko, M. D. Vilisova, I. V. Ponomarev, O.P. Tolbanov |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
2005 Siberian Conference on Control and Communications. |
| DOI: |
10.1109/sibcon.2005.1611203 |
| Popis: |
Detector structures based on VPE GaAs layers, compensated by Cr at diffusion process, have been studied at present article. Detectors were with active region both n-type and /spl pi/-type. It was shown, that at structures based on n-type layers width of space charge region depends on applied reverse bias. And charge collection efficiency from /spl alpha/-particles increased with bias. In structures based on /spl pi/-type layers such dependence is particularly absent and charge collection efficiency is not changed. Both types of structures has high charge collection efficiency from /spl gamma/-irradiation. At applied bias in structures based on n-type layers at the process of charge collection takes part not only electrons but also holes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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