Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon

Autor:	Soo Jin Chua, Sung-Jong Park, Yong-Woon Choi, Sung-Ho Hahm, Jung-Hee Lee, Wang Lian Shan, Heon-Bok Lee
Rok vydání:	2004
Předmět:	Materials science Silicon chemistry business.industry Optoelectronics Schottky diode chemistry.chemical_element business Epitaxy Layer (electronics)
Zdroj:	Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::330594957128f34e153c548995c7c589 https://doi.org/10.7567/ssdm.2004.p6-4 Zobrazit plný text záznamu